Aarhus University
This Partner has been terminated
AGH University of Science and Technology
Al. Adama Mickiewicza 30
30-059 Krakow
Poland
University of Toronto
27 King's College Circle
Toronto, Ontario M5S 1A1
Canada
Foundation for Research and Technology - Hellas
Ν. Plastira 100, Vassilika Vouton
70013, Heraklion, Crete
Greece
National Research Council - Nanoscience Institute
Via Campi 213/A
41125 Modena
Italy
Applied Materials
Via Meuccio Ruini 74/L
42122 Reggio Emilia
Italy
National Institute for Research and Development in Microtechnologies
Erou Iancu Nicolae Street 126A
077190 Bucharest
Romania
IQubits gathers together world-wide leaders in a wide range of disciplines such as quantum physics, materials science and engineering, device physics, computational science, electrical and electronic engineering, measurement science and instrumentation. The consortium can rely on unique competencies and facilities in atomistic numerical simulations, nanofabrication, semiconductor device, mm-wave circuit design, mm-wave transistor and circuit modelling and characterisation, as well as access to best-in-class CMOS foundry technology and manufacturing facilities, all indispensable to address the challenges.
The Nanoscience Institute of the National Research Council (CNR) is responsible for atomistic modeling of nanostructures and simulation of quantum gates and qubit readout. With its strong team of theoretical and computational physicists, the research group has a long-standing and recognized expertise in the investigation of quantum physics and technology in semiconductor quantum dots (schemes for the implementations of quantum computing, correlation effects, coherent manipulation and decoherence).
University of Toronto (UofT) and Aarhus University (AU) have an excellent track record in designing FDSOI and SiGe mm-wave circuits operating in the 60-300 GHz range. IMT, FORTH and UofT have well-endowed nanofabrication facilities and a track record of success in GaN devices and VLSI-compatible Si/SiGe MOSFET process development and characterisation. Not least, the team has best-in-class instrumentation for on-die time- and frequency-domain measurements up to 110 GHz, and 750 GHz, respectively, and is internationally recognized for silicon transistor characterisation at mm-wave frequencies.
Applied Materials (AMat) is a leading developer of novel multiscale simulation approaches connecting material properties to electrical device performance, including compact modeling, needed to bridge the atomistic study carried out at CNR to the circuit design and characterization performed at UofT and AU. In this domain, Applied Materials has a worldwide reputation with outstanding track record on modeling of emerging electron devices, and collaboration with important institutions around the world. In this project, Applied Materials will extend its proprietary device simulation platform to model qubits quantum dots devices including spin- and quantum-related phenomena.