Work Packages

Management, dissemination and exploitation of the proposed work by following the principles of the EU H2020 FET Open programme, assuring research excellence, and scientific and industrial impact.

Definition of the Si, SiGe and III-N qubit and coupled qubit device structures and development of device models accounting for quantum effects. Modeling and atomistic simulations of the Si, SiGe and III-nitride qubits and simulation of the qubit dynamics by accounting for material and defect properties. Multiband K•p modeling of the coupled quantum dot structures and simulation of the qubit dynamics. Development of compact model for circuit-level simulation of coupled-QD qubits.

Design and implementation of spin manipulation and readout circuits in FDSOI CMOS production technology. Low-noise spin control pulse generator, readout amplifier and readout down-converter at multiple millimeter-wave frequencies.

Design and simulation of scaled Si qubits to be manufactured and tested as standalone structures Optimization of the technological processes and characterization techniques. Fabrication of ultra-scaled Silicon qubits on SOI wafer, epitaxy optimization and III-N qubit nanofabrication, and explorative integration of III-N qubits with FDSOI platforms.

Definition of the test structures fabrication and fabrication of on-wafer cryostat measurement set-up for device and circuit characterization down to 4 K and up to 110 GHz. Low-T setup fabrication and qubit measurements. Measurements of qubit ICs at cryogenic and room temperatures. Time-resolved Kerr measurements of III-N heteronanostructures and III-N SET temperature and field dependent measurements.