George Konstantinidis Research Director & Alternate Director of IESL
Dr. George Konstantinidis received his Ph.D degree in Solid State Electronics from the department of Electrical & Electronic Engineering of the University of Salford, UK in 1987. Since 1988 he has been working with the MRG/FORTH where he currently holds the position of Director of Research while he is also the current Alternate Director of IESL. Since 1991 he is heading the processing research activities of the group and has extensive experience in the micro and nanoprocessing of wide band gap semiconductors and carbon-based materials. Since 1997, he has established an open services laboratory and since 2000 is the ISO 9001 quality system manager. He has participated in many European projects. He was the PI of MRG in 7 (FP7, ENIAC) international projects. While now he coordinates 3 European (H2020) and 2 national large RIA projects. He has attracted funding exceeding 7 M€. He was the project manager in the INCO-Copernicus MEMSWAVE project in which novel non-silicon RF MEMS components and circuits were fabricated at FORTH and which was among the runners up of the 2002 DESCARTES prize. In 2003 he received the Prize "Tudor Tanasescu" of the Romanian Academy of Sciences for his work in the RF MEMS. In 2005, he was a key member of the EXEL team that was among the winners of the 2005 Descartes prize. In 2003 he was elected to the Board of Directors of the European Microwave Association (EuMA) while in 2004, 2007 and 2018 he was elected as Vice President of the Greek Micro and Nano Society. He was for more than 10 years an elected member of the Scientific Board of IESL-FORTH. He is PI of bilateral Russia-Greece 'EINSTEIN' project on development of experimental and theoretical studies on physical properties of low dimensional quantum nanoelectronic systems. He is also the PI of MRG in the FETOPEN-01-2016-2017 project CHIRON that targets a novel proof of principle of the essential elements for spin wave computing that started in May 2018. Since September 2019 he is heading a FTI project to establish a production pilot line at MRG for the realization of GaN and RF MEMS based next generation reconfigurable TRX modules for future power RF applications. He has currently 142 publications in refereed journals. He has also numerous conference presentations including many invited ones. He has 10 chapters in books and holds 1 patent.
Role in IQubits: FORTH PI. Coordinating III-nitride based qubit device design and fabrication activities.
Eleftherios Iliopoulos Associate Faculty Member, FORTH,
and Associate Professor, Department of Physics, University of Crete
Dr. Eleftherios Iliopoulos is an Associate Professor in the Dept of Physics, Univ. Crete and an associated Researcher of IESL-FORTH. He holds a Ph.D. (2002) from Boston University, Center for Photonics Research, USA. He has collaborated with a number of international companies (Lokheed-Martin Inc., EADS N.V., Aixtron SE, III-V Lab, EG&G Inc., BAE Inc., Astex Inc., Epion Inc.) and organizations (DARPA, ESA) in epitaxial growth of III-Nitride semiconductor heterostructures and nanostructures, in development of (opto)electronic devices based on them and in novel, QDs based, device concepts. He was a national representative and workgroup vice-chair in the European program COST-MP0805 “Novel gain materials and devices based on IIIV-N compounds” and an elected member of the board of directors of the Hellenic “Micro&Nano” organization. He is a permanent member of the biannual EXMATEC workshop international steering committee and a management committee member of the “Crete Center for Quantum Complexity and Nanotechnology (CCQCN)”. He has authored or co-authored more than 80 publications in recognized international peer-reviewed journals with more than 2000 citations and an h-index of 26. He has been awarded as principal investigator/coordinator two international and one national research projects and has participated as coinvestigator in numerous European ones.
Role in IQubits:Coordinating the epitaxial growth of III-nitride nanostructures. Coordinating low temperature and high magnetic field measurements.
George Deligeorgis Assistant Researcher
Dr. George Deligeorgis earned his PhD in 2008 working on GaAs based Semiconductor laser diodes for telecommunication applications. Following his PhD, carbon-based devices (Graphene and CNTs) became his principal research interest. He stayed in LAAS-CNRS (Laboratory for analysis and architecture of Systems, National Center of Scientific Research), in France between 2010-2014 where he continued his activity in the same subject. He has recently (2015) accepted an Associate Researcher position in FORTH - IESL, Greece to work on high frequency graphene devices for radar applications. Dr. Deligeorgis has worked on numerous projects in design and fabrication of compound semiconductor devices in the field of photonics and high frequency electronics (MMIC) for the last decade. He was involved in several National and European funded projects in the fields of photonics, RF device fabrication and polaritonic devices. He is currently heading the graphene and nanofabrication activity in his group, working on nonlinear graphene-based RF devices and polariton optoelectronics devices combining his knowledge in physics and nanotechnology. He has published more than 60 articles in peer-reviewed journals and has several invited and contributed talks. Finally, Dr. Deligeorgis is a founding member of the “Graphene Center, Greece”, member of the Steering board of Micro & Nano nanotechnology company, a member of several associations (IEEE e.t.c) and a reviewer in several international journals. Dr. Deligeorgis has more than 1300 citation and an h-index of 19.
Role in IQubits: RF characterisation of test devices.
Athanasios Kostopoulos Senior Semiconductor Fabrication Process Engineer
Mr. Athanasios Kostopoulos received the B.Sc. degree in physics, (microelectronics) and the M.Sc. degree in microelectronics-optoelectronics, in 1999 and 2002, respectively, both from the University of Crete, Crete, Greece. He is currently with the Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL-FORTH), Heraklion, Crete, Greece. His research activities involve the design, simulation, and processing of HFET on nitrides. His interests include the technology of III-V devices, SiC, GaN HEMTs, MMICs, and the Characterization of high-power devices. He is co-author of more than 50 scientific papers.
Role in IQubits: III-nitride qubit fabrication.
Antonios Stavrinidis Semiconductor Fabrication Process Engineer
Mr. Antonios Stavrinidis received his undergraduate degree in Physics, from the University of Crete, Greece in 2003, and his M. Sc. in Microelectronics and Optoelectronics working on monolithic integrated microwave GaAs-based receiver in U-band, from the University of Crete, Greece in 2006. He is currently a Researcher Semiconductor Fabrication Process Engineer at the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. He has worked on various projects in on compound semiconductor devices in the field of optoelectronics and high frequency electronics (MMIC). Also, he was involved in several national and European funded projects in the fields of optoelectronics and RF device fabrication. His research experience is design, fabrication and processing of III-V, III-Nitrides and SiC semiconductors and RF MicroElectroMechanical Systems (RF-MEMS), with an expertise in electron beam lithography (EBL). The objective of his work involves the fabrication and processing for the development of electronic and optoelectronic devices. He has more than 50 scientific publication, more than 250 citation and an h-index of 9.
Role in IQubits: Electron beam lithography for the III-nitride qubits.
George Stavrinidis Semiconductor Fabrication Process Engineer
Mr. George Stavrinidis received his undergraduate degree at Electronic Engineering, from the technical institute of Crete, Greece, He is currently a Researcher Technical Staff with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. His research experience is fabrication and processing of III-V, III-Nitrides, and SiC semiconductors, Carbon based materials, MEMS, HEMTs, MMICs, Microneedles Dry electrodes, with an expertise at wire bonding and lapping techniques and electroplating techniques. The objective of his work involves the fabrication and processing for the development of nanoelectronic and optoelectronic devices. He is co-author of more than 26 journal articles and conference proceedings.
Role in IQubits: III-nitride qubit fabrication.
Katerina Tsagaraki Senior Research Technician
Mrs. Katerina Tsagaraki obtained her B.Sc degree in Physics from the University of Crete, Greece in 1987. The next year she worked as a research assistant at Kansas State University, Manhattan Kansas, USA, in the topic of preparation and characterization of magnetic materials. Since the middle of 1988, she is a research assistant at Microelectronics Research group of Institute of Electronic structure and Laser (Foundation for Research and Technology-Hellas), responsible for morphological and structural characterization of novel semiconductors, such as III-nitrides, SiC and GaAs. She is specialized in the techniques of Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. She has contributed to more than 90 publications in international journals and conferences.
Role in IQubits: Structural characterisation of QDs with HRXRD, AFM and FESEM.
Maria Kayampaki Senior Research Technician
Mrs. Maria Kayampaki received the B.Sc. degree in physics in 1992 from the University of Crete, Crete, Greece. Since then she is working with the Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL-FORTH), Heraklion, Crete, Greece. Her research activities involve the electrical and electrochemical Characterization of structures and devices of SiC, GaN and relative materials. She is co-author of more than 30 scientific papers.
Role in IQubits: Initial electrical assessment of fabricated devices.
Maria Androulidaki Senior Research Technician
Mrs. Maria Androulidaki was born in Rethymnon, Greece. She studied physics at the University of Crete from 1983 to 1987. She received the Master degree (MSc) from Physics Department, University of Crete with specialist at Solid State Physics, in 1991. Since 1991 she is Research Assistant at Microelectronics group in IESL, FORTH. Her research interests include optical Characterization in semiconductor materials as photoluminescence, photoreflectance, photoconductivity, time resolved (TR) measurements, FTIR, Raman spectroscopy and absorption characterization. She has more than 100 papers in scientific journals.
Role in IQubits: Optical assessment of material characterization with microphotoluminescence (ÎĽ-PL)
Vasiliki Kontomitrou Research Technician
Mrs. Vasiliki Kontomitrou, received the B.Sc. degree in Natural Resources and Environmental Engineering, in 2009, from the Technological Educational Institute of Chania, Crete, Greece. Her Diploma thesis was about the “Airborne Microbial Concentrations and PM10 Levels in Air Conditioned Offices”. She is currently with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. Her research activities include the design and simulation of fabrication process procedures on semiconductor devices and circuits, thin film deposition techniques (Sputtering) and thin film optical characterization techniques such as Spectroscopic Ellipsometry.
Role in IQubits: Design and simulation of fabrication processes.