Carrier Scattering Mechanisms in Low Density AlGaN HEMTs

May 2022 I. Trikoilis, et. alInternational Workshop on Nitride Semincoductors (IWN)

https://www.iwn2022.org/

Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K

May 2022 S. Bonen, et al.Journal: Solid State Electronics

https://doi.org/10.1016/j.sse.2022.108343

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

September 2021 S. Pati Tripathi, et al.Conference: European Conference on Solid-State Circuits (ESSCIRC)

https://ieeexplore.ieee.org/document/9567759

155-GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL with <30-ns Settling Time and 40-fs rms Jitter

July 2021 A.Zandieh, et al.Journal: IEEE Transactions on Microwave Theory and Techniques

https://ieeexplore.ieee.org/document/9484070

Monolithic Qubit Integrated Circuits

November 2021 S.P. Voinigescu, S. Bonen, U. Alakusu, M.J. Gong, and L. Wu US Patent

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

June 2021 Andrea Secchi, et al.Journal: Physical Review B

https://arxiv.org/abs/2104.07730https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.035302

Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology

June 2021 L. Bellentani, et al.Journal: Physical Review Applied

https://arxiv.org/abs/2106.04940https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.16.054034

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

March 2021 L. Wu,et al.Journal: IEEE Microwave and Wireless Components Letters

https://ieeexplore.ieee.org/document/9381250

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS

October 2020 R.R. Severino, M. Spasaro, and D. ZitoConference: IEEE International Symposium on Circuits and Systems (ISCAS)

10.1109/ISCAS45731.2020.9180790PreprintVideo

Inter-and intra-band Coulomb interactions between holes in Silicon nanostructures

October 2020 Andrea Secchi, et al.

https://arxiv.org/abs/2010.01332https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.205409

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

January 2020 U. Alakusu,et al.Journal: IEEE Microwave and Wireless Components Letters

10.1109/LMWC.2019.2954036.Preprint

Millimeter-Wave Integrated Silicon Devices: Active versus Passive - The Eternal Struggle Between Good and Evil

January 2020 M. Spasaro and D. ZitoConference: IEEE International Semiconductor Conference 2019, Sinaia, Romania

10.1109/SMICND.2019.8923669PreprintSlides

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g-factor, and axial anisotropy

October 2019 F. TroianiJournal: Physical Review B

10.1103/PhysRevB.100.155424arXiv:1907.08391v2

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

September 2019 Matteo Bina, et al.Conference: 12th Italian Quantum Information Science Conference (IQIS 2019)

PresentationBook of Abstract

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

June 2019 M. J. Gong, et al.Conference: IEEE Radiofrequency Integrated Circuits Symposium

10.1109/RFIC.2019.8701847PreprintSlides

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

January 2019 S. Bonen, et al.Journal: IEEE Electron Device Letters

10.1109/LED.2018.2880303Preprint

Prof. Sorin P. Voinigescu Gives Talk at Aarhus University [Chapters]

November 2017 D. ZitoMagazine: IEEE Solid-State Circuits Magazine

10.1109/MSSC.2017.2746160